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Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

Published online by Cambridge University Press:  15 February 2011

Sang-Myeon Han ,
Min-Cheol Lee ,
Su-Hyuk Kang ,
Moon-Young Shin  and
Min-Koo Han
Sang-Myeon Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-Cheol Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Su-Hyuk Kang
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Moon-Young Shin
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
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Abstract

An ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H2.3
Copyright
Copyright © Materials Research Society 2003

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