Hostname: page-component-5b777bbd6c-7mr9c Total loading time: 0 Render date: 2025-06-19T20:51:36.517Z Has data issue: false hasContentIssue false
  • English
  • Français

A Two-Step, Lightly Nitrided Gate Oxidation Process For Sub-0.5 μm Cmos Technology

Published online by Cambridge University Press:  15 February 2011

P. K. Roy ,
Y. Ma  and
M. T. Flemming
P. K. Roy
Affiliation:
Bell Laboratories, Lucent Technologies, Orlando, FL 32819
Y. Ma
Affiliation:
Bell Laboratories, Lucent Technologies, Orlando, FL 32819
M. T. Flemming
Affiliation:
Bell Laboratories, Lucent Technologies, Orlando, FL 32819
Get access

Abstract

This work describes a two-step, lightly nitrided gate oxidation process for sub-0.5 jtm CMOS technology. This process is a simple extension of conventional oxidation using an in-situ N2O post oxidation anneal for nitrogen incorporation. Light nitrogen incorporation (∼3%) near the Si/SiO2 interface has improved oxide characteristics such as defect density (Do.), wear-out (Nbd), breakdown (Vbd) and tunneling (VFN) without altering its charge trapping behavior. Impacts of nitridation are more significant for thinner (<65Å) gate oxides (GOX).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 409
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Roy, P. K. and Sinha, A. K., AT&T Tech. J., 67(6), 155(1988).Google Scholar
2. Soleimani, H., Philipossian, A. and Doyle, B., IEDM Tech. Dig., 629 (1992).Google Scholar
3. -H Tseng, H., Tobin, P. J., Hayden, J. D. and Chang, K. -M., IEDM Tech Dig. 421 (1990).Google Scholar
4. Huang, H., Ting, W., Kwong, D. -L. and Lee, J., IEDM Tech. Dig., 421 (1990)Google Scholar
5. Roy, P. K., ‘Growth Modified Silicon Oxidation’, U. S. Patent 5, 147, 820 (9/92)Google Scholar
6. Roy, P. K. and Ma, Y., American Vacuum Society 42nd National Symposium, Minneapolis, MN, October, 1995.Google Scholar
7. Okada, Y. Tobin, P. J., Reid, K. G., Hedge, R. I., Maiti, B. and Ajuria, S. A., IEEE Trans. Electron Dev., 41(9) 1608(1994).Google Scholar
8. Cochran, W. T., Semiconductor International, 146(1991).Google Scholar
9. Wolf, S., Solid State Tech., 39(1992).Google Scholar
10. Roy, P. K., Kook, T., Kizilyalli, I. C. and Nauda, A. K., Mat. Res. Soc. Symp. Proc., 284, 449(1993).Google Scholar
11. ‘Quantox oxide Monitoring System Manual’, Keithley.Google Scholar