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Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

Published online by Cambridge University Press:  10 February 2011

S. Okhonin ,
A. Ils ,
D. Bouvet ,
P. Fazan ,
G. Guegan ,
S. Deleonibus  and
F. Martin
S. Okhonin
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, okhonin@dpmail.epfl.ch
A. Ils
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, okhonin@dpmail.epfl.ch
D. Bouvet
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, okhonin@dpmail.epfl.ch
P. Fazan
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, okhonin@dpmail.epfl.ch
G. Guegan
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
S. Deleonibus
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
F. Martin
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
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Abstract

The conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 253
Copyright
Copyright © Materials Research Society 1999

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References

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