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Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

Published online by Cambridge University Press:  28 February 2011

T.J. McMahon  and
A. Madan
T.J. McMahon
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
A. Madan
Affiliation:
Glasstech Solar, Inc., P. O. Box 52, Wheat Ridge, CO 80034
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Abstract

It is well known that the performance of hydrogenated amorphous silicon (a-Si) p-i-n type devices is determined by the sequence of deposition. For instance, the stainless steel/p-i-n configuration generally shows a larger value of the open circuit voltage (up to 200mV) compared to the n-i-p sequence of deposition \1,2]. Explanations of this phenomena such as the Dember potential \1], self field effect \2], residual doping \3], hydrogen effusion effects associated with the p+ layer deposition process \4, 5] are unable to satisfactorily explain the difference in performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 287
Copyright
Copyright © Materials Research Society 1985

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References

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