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T-Site-Trapped Molecular Hydrogen in a-Si:H

Published online by Cambridge University Press:  17 March 2011

R. E. Norberg ,
D. J. Leopold ,
P. A. Fedders ,
R. Borzi ,
P. H. Chan ,
J. Herberg  and
N. Tomic
R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
D. J. Leopold
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
R. Borzi
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
P. H. Chan
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
J. Herberg
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
N. Tomic
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
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Abstract

Proton-29Si double resonance NMR measurements on high quality plasma-enhanced chemical vapor deposition a-Si:H deposited from SiH4 show that more than one third of the contained hydrogen is present as H2 molecules residing in the amorphous equivalent of T sites. The NMR signal from these trapped H2 appears in the narrow 4 kHz proton line, which arises from the less clustered hydrogen population. Very little of the molecular component is in the broad ~24 kHz line, which arises mostly from clustered hydrogen tightly bonded to silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A26.2
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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