Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-06T04:07:20.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Transport Properties and Observation of Semimetal-Semiconductor Transition in Bi-based Nanowires

Published online by Cambridge University Press:  11 February 2011

Yu-Ming Lin ,
Stephen B. Cronin ,
Oded Rabin ,
Jackie Y. Ying  and
Mildred S. Dresselhaus
Yu-Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Stephen B. Cronin
Affiliation:
Department of Physics, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Oded Rabin
Affiliation:
Department of Chemistry, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Jackie Y. Ying
Affiliation:
Department of Chemical Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Mildred S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139 Department of Physics, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Temperature-dependent resistance measurements of Bi-related nanowire arrays with different wire diameters and Sb concentrations are performed. The variation in the measured R(T) curves of these nanowires is closely related to the unique semimetal-semiconductor transition in Bi, and the results are explained by theoretical simulations. It is found that the special feature of the maximum in the resistance ratio R(10 K)/R(100 K) can be employed to experimentally identify the conditions for the semimetal-semiconductor transition.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.14
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Isaacson, R. T. and Williams, G. A., Phys. Rev. 185, 682 (1969).Google Scholar
Lin, Y.-M., Sun, X., and Dresselhaus, M. S., Phys. Rev. B 62, 4610 (2000).Google Scholar
Black, M. R., Lin, Y.-M., Cronin, S. B., Rabin, O., and Dresselhaus, M. S., Phys. Rev. B 65, 195417 (2002).Google Scholar
Heremans, J., Thrush, C. M., Lin, Y.-M, Cronin, S., Zhang, Z., Dresselhaus, M. S., and Mansfield, J. F., Phys. Rev. B 61, 2921 (2000).Google Scholar
5. Lin, Y.-M., Cronin, S. B., Ying, J. Y., Dresselhaus, M. S., and Heremans, J. P., Appl. Phys. Lett. 76, 3944 (2000).Google Scholar
6. Lin, Y.-M., Rabin, O., Cronin, S. B., Ying, J. Y., and Dresselhaus, M. S., Appl. Phys. Lett. 81, 2403 (2002).Google Scholar
7. Lenoir, B., Dauscher, A., Devaux, X., Martin-Lopez, R., Ravich, Yu. I., Scherrer, H., and Scherrer, S., in Proceedings of the 15th International Conference on Thermoelectrics (IEEE, 1996), p. 1.Google Scholar
8. Cucka, P. and Barrett, C. S., Acta. Crystallogr. 15, 865 (1962).Google Scholar
9. Rabin, O., Lin, Y.-M., and Dresselhaus, M. S., Appl. Phys. Lett. 79, 81 (2001).Google Scholar
10. Lin, Y.-M., Dresselhaus, M. S. and Ying, J. Y., in Advances in Chemical Engineering Vol. 27 (Academic Press, 2001), Chap. 5.Google Scholar