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Transmission Electron Microscope Study of Interfacial Reactions in Gold-Germanium Contact to Gallium Arsenide*

Published online by Cambridge University Press:  26 February 2011

Taeil Kim  and
D.D.L. Chung
Taeil Kim
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie-Mellon University, Pittsburgh, PA 15213
D.D.L. Chung
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie-Mellon University, Pittsburgh, PA 15213
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Abstract

The structure of 500 Å Au/500 A Ge/500 Å Au/GaAs (100) was studied by transmission electron microscopy after annealing at 350 – 500°C. Annealing at 350 – 450°C caused the formation of AuGeAs with a (110) texture, but this phase disappeared after annealing at 500°C. The hexagonal a-AuGa (or AuGa) was formed after annealing at 400°C, such that (111)Au // (0001)a, and [110]AU // [1120]a and there was perfect lattice match between Au (i.e., Au-rich solid solution) and a-AuGa. After annealing at 450°C or above, a phase tentatively identified as the hexagonal Au3Ga was formed and Ge (i.e., Ge-rich solid solution) became epitaxial to (100) GaAs. Annealing at 400°C caused Au to change from no texture to a (110) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 437
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Equipment supported by NSF, under Grant DMR 76–81561 A01

References

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