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Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors

Published online by Cambridge University Press:  15 February 2011

J. Vanhellemont ,
K. G. F. Janssens ,
S. Frabboni ,
P. Smeys ,
R. Balboni  and
A. Armigliato
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, vanhellemont@imec.be
K. G. F. Janssens
Affiliation:
KULeuven, MTM, de Croylaan 2, B-3001 Leuven, Belgium
S. Frabboni
Affiliation:
Dipartimento di Fisica, Universitá di Modena, Via Campi 213/A, 1-41100 Modena, Italy
P. Smeys
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4055
R. Balboni
Affiliation:
CNR Istituto LAMEL, Via P. Gobetti 101, 1-40129 Bologna, Italy
A. Armigliato
Affiliation:
CNR Istituto LAMEL, Via P. Gobetti 101, 1-40129 Bologna, Italy
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Abstract

An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron diffraction ((LA)CBED) and electron diffraction contrast imaging (EDCI) techniques are discussed in detail. It will be shown by a few case studies that unique and quantitative information on local strain distributions can be obtained by the combined use of both (LA)CBED and EDCI in correlation with three dimensional finite element simulations of the strain distributions in the thinned specimen.

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