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Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon*

Published online by Cambridge University Press:  21 February 2011

S. J. Pennycook ,
J. Narayan  and
R. J. Culbertson
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
On leave of absence at the Microelectronics Center of North Carolina, Research Triangle Park, NC 27709 and the Materials Engineering Dept..North Carolina State University, Raleigh, NC 27650.
R. J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 151
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

[l] Pennycook, S. J., Narayan, J., and Holland, O. W., J. Appl. Phys. 55, 837 (1984).10.1063/1.333179CrossRefGoogle Scholar
[2] Narayan, J., Holland, O. W., Eby, R. E., Wortman, J. J., Ozguz, V., and Rozgonyi, G. A., Appl. Phys. Lett. 43, 957 (1983).10.1063/1.94200CrossRefGoogle Scholar
[31 Kalish, R., Sedgwick, T. O., Mader, S., and Shatas, S., Appl. Phys. Lett. 44, 107 (1984).10.1063/1.94572CrossRefGoogle Scholar
[4] Lasky, J. B., J. Appl. Phys. 54, 6009 (1983).10.1063/1.331780CrossRefGoogle Scholar
[5] Seidel, T. E., IEEE Electron -evice Lett. EDL–4, 353 (1983).10.1109/EDL.1983.25760CrossRefGoogle Scholar
[6] Oehlein, G. S., Cohen, S. A., Sedgwick, T. O., Appl. Phys. Lett. 45, 417 (1984).10.1063/1.95242CrossRefGoogle Scholar
[7] Hodgson, R. T., Deline, V., Mader, S. M., Morehead, F. F., and Gelpey, J., p. 253 in Energy Beam-Solid Interactions and Transient Thermal Processing, Proc. Mat. Res. Soc. 23 (Elsevier, New York, 1984).Google Scholar
[8] This proceedings.Google Scholar
[9] Holland, O. W., Narayan, J., and Fathy, D., Proc. 1984 Conf. on Ion Beam Modification of Materials (in press, 1984).Google Scholar
[10] Tan, T. Y., Goesele, U., and Morehead, F. F., Appl. Phys. A 31, 97 (1983).10.1007/BF00616312CrossRefGoogle Scholar
[11] Fair, R. B. and Weber, G. R., J. Appl. Phys. 44, 273 (1973)–10.1063/1.1661873CrossRefGoogle Scholar
[12] Pennycook, S. J., Narayan, J., and Holland, O. W., J. Cryst. Growth 70, 1984 (in press).10.1016/0022-0248(84)90321-XCrossRefGoogle Scholar