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Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy

Published online by Cambridge University Press:  10 February 2011

M. Masi ,
G. Radaelli ,
N. Roda ,
P. Raimondi ,
S. Carra ,
G. Vaccari  and
D. Crippa
M. Masi
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 MilanoITALY, masi@ipmchx.chfi.polimi.it
G. Radaelli
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 MilanoITALY, masi@ipmchx.chfi.polimi.it
N. Roda
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 MilanoITALY, masi@ipmchx.chfi.polimi.it
P. Raimondi
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 MilanoITALY, masi@ipmchx.chfi.polimi.it
S. Carra
Affiliation:
Dipartimento di Chimica Fisica Applicata-Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 MilanoITALY, masi@ipmchx.chfi.polimi.it
G. Vaccari
Affiliation:
MEMC Electronic Materials, Viale Gherzi 31, 28100 Novara ITALY
D. Crippa
Affiliation:
MEMC Electronic Materials, Viale Gherzi 31, 28100 Novara ITALY
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Abstract

In this work, the epitaxial silicon deposition by SiHCl3-hydrogen mixtures in a AMT 7700 barrel reactor was analyzed through a detailed model where a three dimensional flow dynamic was solved by reduction to a two dimensional geometry under cylindrical coordinates. The model was used to investigate the role of the reactor geometry and of the process parameters on the axial deposition uniformity. A comparison with industrial experimental data was also performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 187
Copyright
Copyright © Materials Research Society 1998

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References

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