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Total Dose Radiation Effects In Si Nanocrystal Non-Volatile Memory Transistors

Published online by Cambridge University Press:  01 February 2011

Mihail P. Petkov ,
L. Douglas Bell ,
Robert J. Walters  and
Harry A. Atwater
Mihail P. Petkov
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109, USA
L. Douglas Bell
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109, USA
Robert J. Walters
Affiliation:
T. J. Watson Laboratory of Applied Physics, California Institute of Technology Pasadena, CA 91125, USA
Harry A. Atwater
Affiliation:
T. J. Watson Laboratory of Applied Physics, California Institute of Technology Pasadena, CA 91125, USA
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Abstract

We report results pertinent to the high total dose tolerance of Si nanocrystal non-volatile memory cells. The nc-Si FETs made by ion implantation retained virtually unchanged write / erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15 Mrad(Si).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 851: Symposium NN – Materials for Space Applications , 2004 , NN3.8
Copyright
Copyright © Materials Research Society 2005

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References

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