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Titanium Carbide Films Deposited by Laser Reactive Ablation

Published online by Cambridge University Press:  25 February 2011

G. Barucca ,
G. Leggieri ,
A. Luches ,
G. Majni  and
P. Mengucci
G. Barucca
Affiliation:
Dipartimento di Scienze dei Materiali e della Terra, Università di Ancona, Via Brecce Bianche, 1-60131 Ancona, Italy
G. Leggieri
Affiliation:
Dipartimento di Fisica, Università di Lecce, Via Arnesano, 1-73100 Lecce, Italy
A. Luches
Affiliation:
Dipartimento di Fisica, Università di Lecce, Via Arnesano, 1-73100 Lecce, Italy
G. Majni
Affiliation:
Dipartimento di Scienze dei Materiali e della Terra, Università di Ancona, Via Brecce Bianche, 1-60131 Ancona, Italy
P. Mengucci
Affiliation:
Dipartimento di Scienze dei Materiali e della Terra, Università di Ancona, Via Brecce Bianche, 1-60131 Ancona, Italy
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Abstract

Titanium carbide films were deposited on silicon wafers by laser reactive ablation. A pure titanium target placed inside a methane (CH4) atmosphere was irradiated by a XeCl excimer laser with a fluence of 5 J/cm2 and a repetition rate of 8 Hz. Experiments were performed at different values of the ambient pressure in order to investigate the influence of the deposition parameters on the film properties. Results show that at low pressure values (p< 10-5 mbar) the deposited layers are mainly constituted of metallic titanium whereas for pressure ranging from 10-5 to 10-1 mbar they are formed of titanium carbide (TiC) with small amount of oxides. The stoichiometry and thickness of the titanium carbide films can be controlled by the partial pressure of the atmosphere and the number of laser pulses, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 577
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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