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Tin as a Diffusion Barrier For III-V Metallization

Published online by Cambridge University Press:  22 February 2011

D.C. Houghton
D.C. Houghton*
Affiliation:
Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Canada KIY 4H7.
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Abstract

The performance of TiN as a diffusion barrier in Au/TiN/InP structures has been studied and compared with Cr and Pt under identical conditions. In order to sensitively monitor interdiffusion, a novel SEM-EDX technique has been used to determine interdiffusion coefficients and activation energies in the temperature range 250–700°C. Extensive intermixing for Cr and Pt was indicated by the SEM-EDX technique and this was confirmed by Auger depth profiling. In addition the heterogeneous formation of the brittle intermetallic phase Au4 in was detected by XRD, and marked the catastrophic failure of the metallization due to delamination. These interfacial reactions and copious interdiffusion may be controlled by a TiN diffusion barrier which remains impervious for periods in excess of 24h at 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 149
Copyright
Copyright © Materials Research Society 1984

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References

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