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Three-Dimensional Asymmetrical Modeling of Rapid Thermal Annealing of Silicon Wafers

Published online by Cambridge University Press:  22 February 2011

V. Nagabushnam  and
R.K. Singh
V. Nagabushnam
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL-32611
R.K. Singh
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL-32611
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Abstract

We have developed an analytical tool to predict temperature variations occuring both across the wafer and down the thermal cycles, based on very simple 3-dimensional physical models depicting the heat transfer processes taking place during a typical rapid thermal processing (RTP) step. This model takes into account the convective and the radiative heat losses along with the thermal conduction within the wafer. An hybrid control volume formulation has been used to solve the heat conduction equation to yield numerical solutions of temperature variation, both on and within the wafer. The effect of ambient gas flow direction and the related asymmetric convective heat loss on the temperature non-uniformity across the wafer at different stages of the thermal cycle is well analyzed. Finally, the temperature non-uniformity across a wafer patterned with oxide is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 383
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Singh, R., J. Appl. Phys. 63, R59 (1988).Google Scholar
2. Roozeboom, F., Mat. Res. Soc. Symp. Proc. 303, 149(1993).CrossRefGoogle Scholar
3. Kakoschke, R., Bubmann, E. and Foll, H., Appl. Phys. A 50, 141(1990).Google Scholar
4. Campbell, S.A., Ahn, K-H., Knutson, K.L., Liu, B.Y.H. and Leighton, J.D., IEEE Trans. Semicond. Manufact. 4(1), 14 (1991).Google Scholar
5. Apte, P.P. and Saraswat, K.C., IEEE Trans. Semicond. Manufact. 2, 180(1992).CrossRefGoogle Scholar
6. Lord, H.A., IEEE Trans. Semicond. Manufact. 1(3), 105(1088).CrossRefGoogle Scholar
7. Bentini, G., Carrera, L. and Donolato, C., J. Appl. Phys. 56(10), 2922 (1984).CrossRefGoogle Scholar
8. Nenyei, Z., Walk, H. and Knarr, T., J. Electrochem. Soc. 140(6), 1728(1993).Google Scholar
9. Sorrell, F.Y., Harris, J.A. and Gyurcsik, R.S., IEEE Trans. Semicond. Manufact. 3(4), 183 (1990).Google Scholar
10. Shieh, T-J and Carter, R.L., IEEE Trans. Electron Devices 36(1), 19 (1989).Google Scholar
11. Knutson, K. L., Campbell, S.A. and Dunn, F., Mat. Res. Soc. Symp. Proc. 303, 211(1993).Google Scholar
12. Chatterjee, S., Trachtenberg, I. and Edgar, T.F., J. Electrochem. Soc. 139(12), 3682(1992).Google Scholar
13. Lie, K-H, Merchant, T.P. and Jensen, K.F., Mat. Res. Soc. Symp. Proc. 303, 197(1993).CrossRefGoogle Scholar
14. Vandenabeele, P. and Maex, K. in Rapid Thermal and Related Processing Techniques, (SPIE 1393, 1990) pp 316–336.Google Scholar
15. Hill, C., Jones, S. and Boys, D., Reduced Thermal Processing for ULSI, edited by Levy, R.A (Plenum Press, New York, 1989) pp. 143.Google Scholar
16. Incropera, F.P. and Dewitt, D.P., Fundamentals of heat and mass trans, 3rd ed. (John Wiley & Sons, New York, 1990).Google Scholar