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Thin Film Transistors Made of Polysilicon Crystallized at 950°C on Steel Substrate

Published online by Cambridge University Press:  17 March 2011

Ming Wu  and
Sigurd Wagner
Ming Wu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A
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Abstract

We fabricated top-gate polycrystalline silicon thin film transistors on steel foil substrates with two processes: (1) Directly deposited n+ source/drain layers. (2) Ion-implanted n+ source/drains. The steel substrates enable reducing the crystallization time of amorphous silicon to polysilicon from 4 hours at 600°C to 20 seconds at 900°C. Thin film transistors were made from polysilicon channel material crystallized at 950°C for either 20 seconds or 20 minutes. The steel foil substrates were passivated with SiO2. The best thin film transistors to date have mobilities of above 30cm2/Vs in both the linear and saturated regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A28.5
Copyright
Copyright © Materials Research Society 2000

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References

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