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Thin Film Stoichiometry Determination by High Temperature Microbalance Technique

Published online by Cambridge University Press:  11 February 2011

H. Fritze ,
H. Seh ,
O. Schneider ,
H. L. Tuller  and
G. Borchardt
H. Fritze
Affiliation:
Technische Universität Clausthal, Department of Physics, Metallurgy and Materials Science, Robert-Koch-Straβe 42, D-38678 Clausthal-Zellerfeld, Germany, holger.fritze@tu-clausthal.de.
H. Seh
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science & Engineering, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A.
O. Schneider
Affiliation:
Technische Universität Clausthal, Department of Physics, Metallurgy and Materials Science, Robert-Koch-Straβe 42, D-38678 Clausthal-Zellerfeld, Germany, holger.fritze@tu-clausthal.de.
H. L. Tuller
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science & Engineering, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A.
G. Borchardt
Affiliation:
Technische Universität Clausthal, Department of Physics, Metallurgy and Materials Science, Robert-Koch-Straβe 42, D-38678 Clausthal-Zellerfeld, Germany, holger.fritze@tu-clausthal.de.
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Abstract

The in-situ determination of small mass changes of thin films became feasible with the availability of high temperature stable microbalances. With this technique, changes of the mechanical properties of thin films deposited on piezoelectric resonators are investigated at temperatures above 500 °C by monitoring the resonance behavior of the resonators. The results are valuable for fundamental understanding of the ionic and electronic transport processes in ceramic materials and for applications such as high temperature gas sensors.

This work correlates the electrical and the mechanical properties of TiO2-x at different oxygen partial pressures. TiO2-x films are deposited onto high temperature resonators by laser ablation and characterized by the high temperature microbalance technique as well as electrical impedance spectroscopy at 600 °C.

The oxygen partial pressure dependent resonance behavior cannot be attributed solely to mass changes of the TiO2-x film. Changes of the film's mechanical stiffness have to be taken into consideration to explain the resonance behavior. The simultaneous electrical impedance measurements indicate a n-type conduction behavior of the TiO2-x films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 756: Symposia EE/FF – Solid-State Ionics – Materials for Fuel Cells and Fuel Processors , 2002 , EE11.4
Copyright
Copyright © Materials Research Society 2003

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References

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