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Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors

Published online by Cambridge University Press:  15 February 2011

W. S. Hong ,
V. Petrova-Koch ,
J. Drewery ,
T. Jing ,
H. Lee  and
V. Perez-Mendez
W. S. Hong
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
V. Petrova-Koch
Affiliation:
Technische Universität Munich, 85747 Garching, Germany
J. Drewery
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
T. Jing
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
H. Lee
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
V. Perez-Mendez
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
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Abstract

Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH4 at a substrate temperature ∼150°C and subsequent annealing at 160°C for about 100 hours. The stress in the films obtained this way decreased to ∼100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 × 1015 cm−3 to 7 × 1014 cm−3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 773
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Xi, J., Hollingsworth, R.E., Buitrago, R.H., Oakley, D., Cumalat, J.P., Nauenberg, U., McNeil, J.A., Anderson, D.F. and Perez-Mendez, V., Nucl. Instr. Meth., A 301 219 (1991)Google Scholar
[2] Perez-Mendez, V., Cho, G., Drewery, J., Jing, T., Kaplan, S.N., Qureshi, S., Wildermuth, D., Goodman, C., Fujieda, I. and Street, R.A., Nud. Phys., B 32 287 (1993)Google Scholar
[3] Hong, W.S., Mireshghi, A., Drewery, J.S., Jing, T., Kaplan, S.N., Kitsuno, Y., Lee, H. and Perez-Mendez, V., to be published in the IEEE Trans. Nucl. Sci., August (1995 Google Scholar
[4] Tamahashi, K., Wakagi, M., Ishikawa, F., Kaneko, T., Tamura, K., Satoh, A. and Hanazono, M., Mat. Res. Soc. Symp. Proc., 192 621 (1990)Google Scholar
[5] Kakinuma, H., Nishikawa, S., Watanabe, T. and Nihei, K., J. Appl. Phys., 59 3110 (1986)Google Scholar
[6] Matsuda, A., Kaga, T., Tanaka, H. and Tanaka, K., Jap. J. Appl. Phys 23., L567 (1984)Google Scholar
[7] Spear, W.E. and Heintze, M., Phil. Mag. B 54 343 (1986)Google Scholar
[8] Hong, W.S., Delgado, J.C., Ruiz, O. and Perez-Mendez, V., Presented at the MRS Symp., Boston, MA, Nov.28-Dec.2, 1994, and to be published in the ProceedingsGoogle Scholar
[9] Heintze, M., Zedlitz, R. and Bauer, G.H., Mat. Res. Soc. Symp. Proc., 297 49 (1993)Google Scholar
[10] Thornton, J.A. and Hoffman, D.W., J. Vac Sci. Tech., 18 203 (1981)Google Scholar
[11] Kroll, U., Finger, F., Dutta, J., Keppner, H., Shah, A., Howling, A., Dorier, J.-L. and Hollenstein, Ch., Mat. Res. Soc. Symp. Proc., 258 135 (1992)Google Scholar
[12] Kakalios, J., Street, R.A., Tsai, C.C., and Weisfield, R., Mat. Res. Soc. Symp. Proc., 95 243 (1987)Google Scholar
[13] Knights, J.C. and Lujan, R.A., Appl. Phys. Lett., 35 244 (1979)Google Scholar
[14] Knights, J.C., Lujan, R.A., Rosenblum, M.P., Street, R.A., Biegelsen, D.K. and Reimer, J.A., Appl. Phys. Lett., 38 5 331 (1981)Google Scholar
[15] Ohashi, Y., Kenne, J., Konagai, M. and Takahashi, K., Appl. Phys. Lett., 42 1028 (1983)Google Scholar
[16] Chabloz, P., Keppner, H., Baertschi, V., Shah, A., Chatellard, D., Egger, J.-P., Denoreaz, M., Jeannet, E., Germond, J.-F., Vuilleumier, R., Mat. Res. Soc. Symp. Proc., 258 1057 (1992)Google Scholar
[17] Hishikawa, Y., J. Appl. Phys., 62 3150 (1987)Google Scholar
[18] Ziegler, Y., Curtins, H., Baumann, J. and Shah, A., Mat. Res. Soc. Symp. Proc., 149 81 (1989)Google Scholar
[19] Kitsuno, Y., Cho, G., Drewery, J., Hong, W.S. and Perez-Mendez, V., Jap. J. Appl. Phys., 33 Part 1 3A 1261 (1994)Google Scholar
[20] Brenner, A. and Senderoff, S., J. Res. Nat'l. Bureau ofStanards, 42 105 (1949)Google Scholar
[21] Qureshi, S., Perez-Mendez, V., Cho, G., Fujieda, I., and Street, R.A., IEEE Trans. Nucl. Sci., NS–36 194 (1989)Google Scholar
[22] Spear, W.E., J. Non-Cryst. Sol., 1 197 (1968)Google Scholar
[23] Hong, W.S., Drewery, J.S., Jing, T., Lee, H., Kaplan, S.N. and Perez-Mendez, V., submitted to Section A of Nucl. Inst. Meth. in Phys. Res.Google Scholar
[24] Zanzuchi, P.J., Semiconductors and Semimetals, Vol.21 Part B, Ed. by Pankove, J., pp. 113, Academic Press (1984)Google Scholar
[25] Johnson, N.M., Ponce, F.A., Street, R.A. and Nemanich, R.J., Phys. Rev. B, 35 4166 (1987)Google Scholar
[26] Beyer, W., Wagner, H. and Mell, H., Solid State Commun., 39 375 (1981)Google Scholar