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Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

Published online by Cambridge University Press:  25 February 2011

Kamakhya P. Ghatak  and
S. N. Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics & Tele-communication Engineering, University of Jadavpur, Calcutta - 700032, INDIA
S. N. Biswas
Affiliation:
Department of Electronics & Tele-communication Engineering B.E. College, Shibpur, Howrah, West Bengal, INDIA
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Abstract

In this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 465
Copyright
Copyright © Materials Research Society 1991

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References

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