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Thermochemistry of Silicon Lpcvd Revisited with Kinetic Data

Published online by Cambridge University Press:  10 February 2011

Constantin Vahlas  and
Elisabeth Blanquet
Constantin Vahlas
Affiliation:
ENS Chimie Toulouse, 118 Route de Narbonne, 31077 Toulouse cedex 4, France, cvahlas@ensct.fr
Elisabeth Blanquet
Affiliation:
LTPCM, INPG/CNRS/UJF, ENS Electrochimie Electrométallurgie Grenoble, BP 75, 38402 Saint Martin d'Hères, France
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Abstract

Partial equilibrium calculations simulating the kinetically controlled low pressure chemical vapor deposition of silicon from silane are presented. Firstly, the sticking coefficient of each reactive species (σ) is evaluated by means of homogeneous calculations in the gas phase. Then, in a series of heterogeneous calculations, the influence of σ on the formation of the film is considered a) by reducing the quantities of the reactive species in the input gas, and b) by modifying their thermodynamic data. The obtained composition of the gas phase is used to estimate its supersaturation and the driving force for the deposition of silicon. The results are correlated with the morphology of the films deposited in equivalent conditions and, in view of this correlation, the validity of the presented approach is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 951
Copyright
Copyright © Materials Research Society 1998

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References

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