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Thermally-Induced Change of Conductivity and Defect Density in Amorphous Silicon-Germanium Alloys

Published online by Cambridge University Press:  25 February 2011

Tatsuo Shimizu ,
Xixiang Xu ,
Hiroyuki Sasaki ,
Hui Yan ,
Akiharu Morimoto  and
Minoru Kumeda
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hiroyuki Sasaki
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hui Yan
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

Thermally-induced metastable phenomena in amorphous silicon-germanium alloys were studied by conductivity and ESR measurements. Fast cooling from 250 °C reduced both dark- and photo-conductivities by a factor of 3–4 while the neutral defect density remained unchanged. Thermally-induced change in conductivity relaxed towards equilibrium with a stretched exponential form. The thermal equilibrium temperature was found to be roughly proportional to the optical gap for a–Si:H, a–Sii−xCx:H, a–Si1−xNx:H and a–Si1−xGex:H:F.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 695
Copyright
Copyright © Materials Research Society 1990

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References

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