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Thermal Stress in Doped Silicate Glasses (B,P) Deposited by PECVD and LPCVD

Published online by Cambridge University Press:  15 February 2011

H. Bouchard ,
A. Azelmad ,
J.F. Currie ,
M. Meunier ,
S. Blain  and
T. Darwall
H. Bouchard
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
A. Azelmad
Affiliation:
Goal Electronics Inc. Waterloo, Ontario, Canada, N2L 6J7
J.F. Currie
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
M. Meunier
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
S. Blain
Affiliation:
Mitel S.C.C., 18 boul. de I'Aéroport, Bromont, Québec, Canada, J0I 1L0
T. Darwall
Affiliation:
Mitel S.C.C., 18 boul. de I'Aéroport, Bromont, Québec, Canada, J0I 1L0
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Abstract

Using an in situ stress measurement technique which measures stress as a function of annealing temperature, we have investigated the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). The stress at room temperature is σi. Upon heating, it increases to a maximum, σm, corresponding to a temperature Tm, above which the stress is reduced to zero at a temperature T0. All these parameters plus the expansion coefficient are dependent on dopant concentrations and deposition technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 63
Copyright
Copyright © Materials Research Society 1993

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References

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