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Thermal Stability of Metal Films Deposited by Ionized Cluster Beams

Published online by Cambridge University Press:  26 February 2011

I. Yamada ,
H. Usui ,
H. Harumoto  and
T. Takagi
I. Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan.
H. Usui
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan.
H. Harumoto
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan.
T. Takagi
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan.
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Abstract

Our previous experiments have shown that Al and Au films deposited on Si substrates by ionized cluster beams (ICB) exhibit high thermal stability and .long electromigration life time. To understand these characteristics, in-situ XPS measurements during ICB deposition of Au on Si(111) substrate have been made. The results show that at low coverages, the splitting between the two prominent structures in the Au-5d peaks in the valence band becomes closer to those of pure bulk gold when a film is deposited at high acceleration voltages. In contrast to this an appreciable change of the binding energy of the Si-2p state at low coverage and high acceleration voltage could not be observed. These results suggest that a high density layer is formed and any Au-Si interaction is suppressed at the initial stage of film deposition. This could be one of the reasons why ICB-deposited films exhibit high thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 195
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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