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The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

Hyunchul Sohn ,
E. R. Weber ,
S. Nozaki ,
M. Konagai  and
K. Takahashi
Hyunchul Sohn
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley CA94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley CA94720
S. Nozaki
Affiliation:
Department of Physical Electronics, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan
M. Konagai
Affiliation:
Department of Physical Electronics, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan
K. Takahashi
Affiliation:
Department of Physical Electronics, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan
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Abstract

Heavily carbon-doped GaAs thin films with a hole concentration of 5.8 × 1020 cm-3, grown by metalorganic molecular beam epitaxy (MOMBE), were annealed at 900°C for 30 minutes. The microstructural changes due to annealing were investigated by transmission electron microscopy. Electron diffraction study showed some evidence of carbon clustering on {111} in as-grown samples. A high density of precipitates was found in the annealed sample, together with a decrease of the lattice contraction and hole concentration. In the as-grown layer, misfit dislocations with only one type of Burgers vector were observed, while misfit dislocations with the several Burgers vectors were observed in [110] direction after annealing. The density of misfit dislocations in both <110> directions increased significantly even though the lattice contraction in carbon-doped GaAs decreased after annealing. A model is proposed to explain the change of misfit dislocation density in heavily carbon-doped GaAs layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 129
Copyright
Copyright © Materials Research Society 1992

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References

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