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Thermal Stability and Failure Mechanisms of Au/Tiw(N)/Si and Au/TiW(N)/Si02/Si Systems

Published online by Cambridge University Press:  15 February 2011

C. R. Chen  and
L. J. Chen
C. R. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hau University, Hsinchu, Taiwan, Republic of China.
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hau University, Hsinchu, Taiwan, Republic of China.
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Abstract

Thermal stability and failure mechanisms of Au/TiW(N)/Si and Au/TiW(N)/SiO2/Si systems have been studied by both conventional and high-resolution transmission electron microscopy, X- ray diffraction and Auger electron spectroscopy. For films deposited in Ar gas containing 20% N2, a single face-centered-cubic phase was the only crystalline phase detected to form. The samples were found to remain stable after annealing at 700 °C for 30 min. The stability temperature for Au/TiW(N)(Ar:N2=80:20)/SiO2/Si samples was found to be higher than those of Au/TiW(N) (Ar:N2=90:10)/SiO2/Si and Au/TiW/SiO2/Si samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 377
Copyright
Copyright © Materials Research Society 1996

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References

1. Hoshino, M., Kasai, K. and Komeno, J., J. Appl. Phys., 31 (1992) 4403.Google Scholar
2. Kanamori, S., Thin Solid Films, 136 (1986) 195.Google Scholar
3. Ostling, M., Nygren, S., Petersson, C. S., Norstrom, H., Buchta, R., Blom, H. O. and Berg, S., Thin Solid Films, 145 (1986) 81.Google Scholar
4. Babcock, S. E. and Tu, K. N., J. Appl. Phys., 59 (1986) 1599.Google Scholar
5. Wolters, R. A. M. and Nellison, A. J. M., Solid State Technol., 29 (1980) 131.Google Scholar
6. Dirks, A. G., Wolters, R. A. M. and Nellissen, A. J. M., 193 (1990) 201.Google Scholar
7. Raaijmaker, I. J., Seatalvad, T., Bhansali, A. S., Burrow, B. J., Gutai, L. and Kim, K. B., J. Electro. Mater., 19 (1990) 1221.Google Scholar
8. Dirks, A. G., Wolters, R. A. M. and Deveirman, A. E. M., Thin Solid Films, 208 (1992) 181.Google Scholar
9. Kattelus, H. P., Kolawa, E., Affolter, K. and Nicolet, M. A., J. Vac. Sci. Technol., A3 (1985) 2246.Google Scholar
10. Cros, A. and Muret, P., Mater. Sci. Reports, 8 (1992) 271.Google Scholar
11. Nowicki, R. S., Harris, J. M., Nicolet, M-A. and Mitchell, I. V., Thin Solid Films, 69, (1980) 53.Google Scholar
12. Opulowski, J. M., Sisson, R. O. and Blederman, R. R., Thin Solid Films, 53 (1987) 313.Google Scholar
13. Lou, I., Chen, L., Eisenbraun, E. T., Schermerhorn, E. J., Toscano, P. J.,Google Scholar