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Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

Published online by Cambridge University Press:  14 July 2014

Vanessa Vervisch ,
Fatima Issa ,
Stéphane Biondo ,
Laurent Ottaviani ,
Wilfried Vervisch ,
Dora Szalkai ,
Ludo Vermeeren ,
Axel Klix ,
Anders Hallen  and
Andrej Kuznetsov
...Show all authors
Vanessa Vervisch
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Fatima Issa
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Stéphane Biondo
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Laurent Ottaviani
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Wilfried Vervisch
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Dora Szalkai
Affiliation:
KIT-Neutron Laboratory TU Dresden and Reactor Technology Helmholtz-Zentrum, Germany
Ludo Vermeeren
Affiliation:
SCK•CEN, Boeretang 200, B-2400 Mol, Belgium
Axel Klix
Affiliation:
KIT-Neutron Laboratory TU Dresden and Reactor Technology Helmholtz-Zentrum, Germany
Anders Hallen
Affiliation:
KTH, Electrum 229, 16440 Kista, Sweden
Andrej Kuznetsov
Affiliation:
University of Oslo, PO Box 1048 Blindern, NO-0316 Oslo, Norway
Mihai Lazar
Affiliation:
AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
Abdallah Lyoussi
Affiliation:
CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance, France
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Abstract:

The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Keywords

electrical propertiesdevicesneutron irradiation

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd03-09
Copyright
Copyright © Materials Research Society 2014 

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References

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