Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-05T15:07:02.170Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Equilibration and Growth of Doped Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

J. Kakalios ,
R. A. Street ,
C. C. Tsai  and
R. Weisfield
J. Kakalios
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. Weisfield
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

The relation between the thermal equilibration of the defect structure in n-type doped hydrogenated amorphous silicon (a-Si:H) and the deposition conditions has been investigated. When the deposition rate is increased by raising the rf power the equilibration time constants become longer, though the thermal equilibrium processes are qualitatively similar to those in samples grown under optimal conditions. Models relating the slower equilibration rate to the deposition-induced microstructure are explored.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 243
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fritzsche, H., Fundamental Physics of Amorphous Semiconductors, ed. by Yonezawa, F. (Springer-Verlag, Berlin), 1 (1987).Google Scholar
2. Tsai, C. C., Knights, J. C., Chang, G. and Wacker, B., J. Appl. Phys. 59, 2998 (1986).Google Scholar
3. Street, R. A., Kakalios, J. and Hayes, T. M., Phys. Rev. B 34, 3030 (1986).Google Scholar
4. Street, R. A., Kakalios, J., Tsai, C. C. and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).Google Scholar
5. Street, R. A., Tsai, C. C., Kakalios, J. and Jackson, W. B., Philos. Mag. B (in press).Google Scholar
6. Street, R. A., Knights, J. C. and Biegelsen, D. K., Phys. Rev. B 18, 1880 (1978).Google Scholar
7. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).Google Scholar
8. Ast, D. G. and Brodsky, M. H., Inst. Phys. Conf. Ser. 43, 1159 (1979).Google Scholar
9. Kakalios, J., Street, R. A. and Jackson, W. B., to be published.Google Scholar
10. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
11. Stutzmann, M. and Jackson, W. B., Solid State Commun. (to be published).Google Scholar
12. Reimer, J. A., Vaughan, R. W. and Knights, J. C., Phys. Rev. Lett. 44, 193 (1980).Google Scholar
13. Baum, J., Gleason, K. K., Pines, A., Garroway, A. N. and Reimer, J. A., Phys. Rev. Lett. 56, 1377 (1986).Google Scholar