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Thermal Conductivity of GaN Grown on Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

C. Mion ,
Y. C. Chang ,
J. F. Muth ,
P. Rajagopal  and
J. D. Brown
C. Mion
Affiliation:
ECE Dept Box 7911, North Carolina State University, Raleigh, NC, 27695, USA.
Y. C. Chang
Affiliation:
ECE Dept Box 7911, North Carolina State University, Raleigh, NC, 27695, USA.
J. F. Muth
Affiliation:
ECE Dept Box 7911, North Carolina State University, Raleigh, NC, 27695, USA.
P. Rajagopal
Affiliation:
Nitronex Corporation, 628 Hutton Street Suite 106, Raleigh, NC, 27606, USA.
J. D. Brown
Affiliation:
Nitronex Corporation, 628 Hutton Street Suite 106, Raleigh, NC, 27606, USA.
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Abstract

One of the principle problems of high power electronic devices is the extraction of heat from the active region of the device. The thermal conductivity of the substrate is a crucial parameter affecting the thermal dissipation capability of a device. In this study we investigated the thermal conductivity at room temperature of five GaN samples grown on silicon, employing the 3 omega thermal conductivity method. The thickness of the GaN layers varied from 0 to 700 nm. The effective thermal conductivity for the GaN layers was found to range from 130 to 140 W/m·K which is comparable to thermal conductivity of the silicon substrate. This result indicates that the heat transfer of GaN on silicon is as good as either GaN or silicon alone, and that no substantial thermal degradation attributable to the GaN/Silicon interface is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.35
Copyright
Copyright © Materials Research Society 2004

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References

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