Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-02-10T12:58:02.301Z Has data issue: false hasContentIssue false
  • English
  • Français

Tetraalkyldiarsines As Potential Precursors for Electronic Materials: Synthesis and Characterization Of Various Iso-Propyl Arsenic Compounds

Published online by Cambridge University Press:  22 February 2011

Lawrence F. Brough ,
Liu Gang ,
Matthew A. Lipkovich ,
Thomas J. Colacot ,
Virgil L. Goedken  and
William S. Rees Jr.
Lawrence F. Brough
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Liu Gang
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Matthew A. Lipkovich
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Thomas J. Colacot
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
Virgil L. Goedken
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
William S. Rees Jr.*
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006
*
*Address all correspondence to this author at: School of Chemistry and Biochemistry and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Get access

Abstract

Tetrakis(iso-propyl)diarsine was synthesized by the reaction of (i-Pr)2AsLi with (i-Pr)2AsI. The lithium salt of the secondary arsine was produced following deprotonation of (i-Pr)2AsH, obtained by reduction of (i-Pr)2AsI, which was prepared by the thermolysis of (i-Pr)3Asl2. The X-ray crystal structure of \(i-Pr)3AsI]\I] has been determined on the product of the reaction of (i-Pr)3As and 12. Compounds of the general form E=As(i-Pr)3 (E = O, S, Se) have been prepared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 213
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. a) Porter, C. W. and Borgstrom, P., J. Am. Chem. Soc. 41, 2048 (1919). b) Wide Gap IIVI Semiconductors, W. Kuhn, H. P. Wagner, H. Stanzi, K. Wolf, K. Worle, S. Lankes, J. Betz, M. Woraz, D. Lichtenberger, H. Leiderer, W. Gebhard and R. Triboulet, R. L. Aulombard and J. B. Mullin, eds., (Adam Hilger, Bristol, UK), 1991, p. A105. c) V. L. Goedken, L. F. Brough and W. S. Rees, Jr., J. Organomet. Chem. 449, 125 (1993).Google Scholar
2. Elschenbroich, C. and Salzer, A., Organometallics: A Concise Introduction, (VCH, New York), 1992.Google Scholar
3. Doak, G. O. and Freedman, L. D., Organometallic Compounds of Arsenic. Antimony. and Bismuth, (Wiley-Interscience, New York), 1970.Google Scholar
4. a) Goubeau, J. and Baumgdirtner, R., Z. Electrochem. 64, 598 (1960). b) E. F. Wells, Z. Kristallogr. 99, 367 (1938).Google Scholar
5. a) O'Brien, M. H., Doak, G. O., and Long, G. G., Inorg. Chim. Acta 1, 34 (1967). b) M. H. O'Brien, Ph.D. Thesis, North Carolina State University, 1968.Google Scholar
6. a) Bhaskar, K. R., Bhat, S. N., Singh, S., and Rao, C. N. R., J. Inorg. Nucl. Chem. 28, 1915 (1966). b) S. N. Bhat and C. N. R. Rao, J. Amer. Chem. Soc. 88, 3216 (1966).Google Scholar