Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-04T16:48:35.907Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon

Published online by Cambridge University Press:  21 February 2011

R. F. Pinizzotto ,
H. F. Schaake ,
R. G. Massey  and
D. W. Heidt
R. F. Pinizzotto
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
H. F. Schaake
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
R. G. Massey
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
D. W. Heidt
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
Get access

Abstract

A new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] For a review, refer to the paper by R.A.Craven in this Volume or to Huff, H.R., Solid State Technology, Feb 1983, pg. 89 and April 1983, pg. 211.Google Scholar
[2] Kishino, S., Aoshima, T., Yoshinaka, A., Shimizu, H. and Ono, M., Jap. J. Appl. Phys., 23(1984)L9.10.1143/JJAP.23.L9CrossRefGoogle Scholar
[3[ Bischoff, B.K., Patrick, W.J. and Strudwick, T.H., U.S. Patent 4,437,922, 20 March 1984.Google Scholar
[4] Barrett, C.R., Nix, W.D. and Tetelman, A.S., The Principles of Engineering Materials, Prentice-Hall, Inc., Englewood Cliffs, New Jersey, 1973.Google Scholar
[5] Huff, H.R., Schaake, H.F., Robinson, J.T., Baber, S.C. and Wong, D., J. Electrochem. Soc., 130(1983)1551.10.1149/1.2120032CrossRefGoogle Scholar
[6] Pinizzotto, R.F. and Schaake, H.F., Proc. Mater. Res. Soc., 2(1981)387.10.1557/PROC-2-387CrossRefGoogle Scholar
[7] Tan, T.Y. and Tice, W.K., Phil. Mag., 34(1976)615.10.1080/14786437608223798CrossRefGoogle Scholar