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Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Binh Nguyenphu ,
Minseok Oh  and
Anthony T. Fiory
Binh Nguyenphu
Affiliation:
Lucent Technologies Inc., Bell Labs, 9333 S. John Young Parkway, Orlando, FL 32819
Minseok Oh
Affiliation:
Lucent Technologies Inc., Bell Labs, 9333 S. John Young Parkway, Orlando, FL 32819
Anthony T. Fiory
Affiliation:
Lucent Technologies Inc., Bell Labs, 700 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Current trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 291
Copyright
Copyright © Materials Research Society 1996

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References

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