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Temperature Dependent Transport in Microcrystalline PIN Diodes

Published online by Cambridge University Press:  17 March 2011

T. Brammer ,
H. Stiebig ,
A. Lambertz ,
W. Reetz  and
H. Wagner
T. Brammer
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Stiebig
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
A. Lambertz
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
W. Reetz
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Wagner
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

The optoelectronic behavior of diodes deposited by plasma enhanced chemical vapor deposition was investigated for a series of different silane concentrations in the gas phase. The purpose of this work was to correlate device characteristics with inherent properties of microcrystalline silicon by experiments and numerical simulations. Dark diode characteristics and, therefore, the open circuit voltage behavior of this series were dominated by the bulk properties of the i-layer (equilibrium carrier concentration) as shown by numerical modeling. Measurement of the solar cell output parameters as a function of the temperature showed that the fill factor of solar cells with small silane concentrations is dominated by the dark diode characteristics. This is in contrast to the temperature dependent fill factor of solar cells with large silane concentration which is limited by the extraction efficiency of the photogenerated carriers. Interface effects dominated the temperature dependent blue response. The gain in blue response increased with temperature and silane concentration by up to 200 % which revealed transport limiting material properties in the vicinity of the p/i-interface. This behavior was attributed to the nucleation region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A32.3
Copyright
Copyright © Materials Research Society 2000

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References

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