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Temperature Dependent Photoluminescence Study of High Silicon doped AIGaAs and the Correlation between the Photoluminescence Spectra and the Doping Level

Published online by Cambridge University Press:  10 February 2011

G. Koley ,
W. Liu ,
K. Prasad  and
M. Lin
G. Koley
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts, Lowell
W. Liu
Affiliation:
Alpha Industries Inc., 20 Sylvan Road, Woburn, Massachusetts
K. Prasad
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts, Lowell
M. Lin
Affiliation:
Alpha Industries Inc., 20 Sylvan Road, Woburn, Massachusetts
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Abstract

We report on the room temperature and the low temperature ( 77 K ) study of highly Si doped MBE grown bulk Al.2Ga.8As layers by Photoluminescence ( PL ), Hall, X-Ray and Electrochemical Voltage Profiler ( ECV ) technique. The room temperature PL spectra shows the presence of an asymmetric broad peak in the low energy side whose Full Width at Half Maxima (FWHM) and intensity increases with the doping level. The broad peak has been found to be a combination of two individual peaks, one arising out of the DX center related recombinations and the other due to some Silicon related complex acceptor sites. The low temperature PL also shows a ‘strange peak’ near the Al2Gas8As band edge luminescence peak for wafers grown at 600°C. This peak which increases in intensity at a very rapid rate with falling temperature and shift very rapidly with temperature can be attributed to some AIGaAs growth defect related recombination center, depending on the growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 151
Copyright
Copyright © Materials Research Society 1999

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References

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