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Temperature Dependence of the Photoinduced Degradation and Annealing in a-Si:H

Published online by Cambridge University Press:  17 March 2011

Niko Schultz  and
P. Craig Taylor
Niko Schultz
Affiliation:
University of Utah, Salt Lake City, Utah 84112
P. Craig Taylor
Affiliation:
University of Utah, Salt Lake City, Utah 84112
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Abstract

We investigated the temperature dependence of the production and annealing kinetics of the light induced defect states in a:Si:H by electron spin resonance (ESR). At low temperatures (T ∼ 25 K) the silicon dangling bond production is about half as efficient as it is at 300 K. Defects, which are created below about 100 K, almost entirely anneal at room temperature. A sample of a-Si:H, which is subjected to several photo-excitation and annealing cycles, shows a very slow increase of both the degraded and annealed defect densities. The difference in the spin densities between the annealed and degraded states decreases with an increasing number of degradation/annealing cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A3.4
Copyright
Copyright © Materials Research Society 2000

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References

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