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Tem Study of Metal Impurity Precipitates in the Surface Regions of Silicon Wafers

Published online by Cambridge University Press:  26 February 2011

M. Seibt  and
K. Graff
M. Seibt
Affiliation:
IV. Physikalisches Institut der Universität Göttingen, D-3400 Göttingen, Bunsenstr. 11-15, Federal Republic of Germany
K. Graff
Affiliation:
TELEFUNKEN electronic, Theresienstr.2, D-7100 Heilbronn, Federal Republic of Germany
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Abstract

The precipitation behaviour of the transition metals Co, Ni, Cu and Pd has been studied by means of conventional and high - resolution electron microscopy. Special experimental conditions for specimen preparation were chosen, which lead to the formation of haze. These conditions were the same for all metals. Therefore, a direct comparison of the respective precipitation phenomena was possible. Co and Ni were found to precipitate as Si - rich silicide particles exhibiting various morphologies attributed to different stages of particle growth and ripening. It is shown that the generation of Si- self - interstitials (and vacancies) plays a minor role in the preci-pitate formation. On the other hand Cu and Pd precipitate as metal - rich silicide particles. They form star - like colonies consisting of small particles and extended extrinsic edge - type dislocation loops. The precipitation behaviour of these two met-als is governed by the generation of Si - self - interstitials due to the large misfit of the metal - rich silicide particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 215
Copyright
Copyright © Materials Research Society 1988

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References

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