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System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices.

Published online by Cambridge University Press:  11 February 2011

Roland Rupp  and
Ilia Zverev
Roland Rupp
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
Ilia Zverev
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
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Abstract

Focussing on unipolar SiC power devices a variety of applications are described, where cost reduction can be a achieved on system level even for SiC device costs being several times higher than the costs of the competing Si devices. Based on the specific properties of SiC devices like Schottky diodes and JFETs it is explained with the help of these examples how this is attainable.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K7.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] see http://www.ecn.purdue.edu/WBG/Data_Bank/Best_Performance.htmlGoogle Scholar
[2] Stephani, D., Proc. of the PCIM Conference 2002 NürnbergGoogle Scholar
[3] Infineon Press Release Feb. 2001; http://www.infineon.com/news/press/102-019e.htm Google Scholar
[4] Microsemi Press Release Sept. 2001; http://www.microsemi.com/news/newsitem.asp?id=298 Google Scholar
[5] Lorenz, L., Deboy, G., Knapp, A., Maerz, M., Proc. ISPSD'99, pp.3–10, 1999 Google Scholar
[6] Peters, D., Friedrichs, P., Schörner, R., Stephani, D.; Mat. Sci. For. 389–393 (2002) pp. 1125–1128 Google Scholar
[7] Dahlquist, F., Lendenmann, H., Östling, M.; Mat. Sci. For. 389–393 (2002) pp. 1129–1132 Google Scholar
[8] Treu, M., Rupp, R., Kapels, H., Bartsch, W.; Mat. Sci. For 353–356 (2001) pp 679–682 Google Scholar
[9] Infineon datasheet SDP06S60 www.infineon.com/cgi/ecrm.dll/ecrm/scripts/public_download.jsp?oid=27312&parent_oid=22168Google Scholar
[10] Morisette, D.T., Cooper, J.A. Jr Mat. Sci. For. Vols. 389–393 (2002) pp 1157–1160.Google Scholar
[11] Schörner, R., Friedrichs, P., Peters, D., Mitlehner, H.,, Weis, B., Stephani, D., Mat. Sci. For. Vol. 338–342 (2000), pp 1295–1298Google Scholar
[12] Chung, G.Y.; Tin, C.C.; Williams, J.R.; McDonald, K.; Chanana, R.K.; Weller, R.A.; Pantelides, S.T.; Feldman, L.C.; Holland, O.W.; Das, M.K.; Palmour, J.W.,”IEEE Electron Device Letters, Vol. 22 (2001) No. 4, p.176,Google Scholar
[13] Mitlehner, H., Bartsch, W., Dohnke, K.O., Friedrichs, P., Kaltschmidt, R., Weinert, U., Weis, B., Stephani, D.; Proc. of the ISPSD 1999 Toronto (1999) pp.339–342 Google Scholar
[14] Mitlehner, H., Friedrichs, P., Dohnke, K.O., Schörner, R., Elpelt, R., Stephani, D.; Proc. of the PCIM Conference 2002 NürnbergGoogle Scholar
[15] Friedrichs, P., Mitlehner, H., Schoerner, R., Dohnke, K.-O., Elpelt, R., Stephani, D., Mat. Sci. For. 389–393 (2002) pp. 1185–1190 Google Scholar
[16] Infineon datasheet SPD25N06S2–40; www.infineon.com/cgi/ecrm.dll/ecrm/scripts/public_download.jsp?oid=27654Google Scholar
[17] Kapels, H., Rupp, R., Lorenz, L., Zverev, I.; Proc. of the PCIM Conference (2001) NürnbergGoogle Scholar
[18] Zverev, I., Kapels, H., Rupp, R., Herfurth, M.; Proc. of the PCIM Conference (2002) Nürnberg Google Scholar
[19] Laska, T., Muenzer, M., Pfirsch, F.; Schaeffer, C., Schmidt, T.; Proc. ISPSD′2000 (Toulouse) p. 355 Google Scholar
[20] Hitachi datasheet 2SK1317; www.has.hitachi.com.sg/databook/Hitachi/Mosfet/2SK1317.pdf Google Scholar
[21] Zverev, I., Rupp, R.; applied for publication at the APEC Conference 2003 Google Scholar
[22] PDF-Based Power Applications Library, Artesyn Technologies, www.artesyn.com, 2002 Google Scholar
[23] Ovren, C., Lendenmann, H., Linder, S., Bijlenga, B. “Electronics with power” Focus on Transmission and Distribution, ABB review 2000 Google Scholar