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Synthesis of Buried Layers of β Sic in Single Crystal Silicon

Published online by Cambridge University Press:  28 February 2011

Karen J Reeson ,
Peter L F Hemment ,
John Stoemenos ,
John R Davis  and
George K Celler
Karen J Reeson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Peter L F Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
John Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Thessaloniki, Greece.
John R Davis
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
George K Celler
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, U.K. °AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A.
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Abstract

It is demonstrated that buried layers of β SiC can be fabricated within single crystal silicon substrates by implanting high doses of energetic carbon ions. If the implantation temperature is sufficiently high >625°C then the β SiC grows epitaxially within the silicon, during implantation, using the substrate as a seed. During the subsequent high temperature anneal redistribution of the implanted species occurs to give a well defined buried layer of β SiC overlain by single crystal silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 473
Copyright
Copyright © Materials Research Society 1988

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