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Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

Published online by Cambridge University Press:  15 February 2011

Thomas Fanning ,
Michael Dudley ,
Franklyn F.Y. Wang ,
David Gordon-Smith  and
David T. Hodul
Thomas Fanning
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Franklyn F.Y. Wang
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
David Gordon-Smith
Affiliation:
Dept. of Engineering, University of Warwick, Coventry CV4 7AL, UK
David T. Hodul
Affiliation:
Varian Research Center, Palo Alto, CA 94303
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Abstract

Czochralski (CZ) grown Si wafers, specially prepared with unusually high carbon content (ranging from 3 to 7 ppma), were subjected to a rapid thermal processing (RTP) treatment at 1050°C for 60s. Synchrotron white beam x-ray topography in transmission geometry was used to study defect structures in these Si wafers, both prior and subsequent to this RTP treatment. Observations of both the partial relaxation of the strain fields of precipitates and widespread nucleation and propagation of dislocations accompanying RTP are presented and discussed. Results are contrasted with those from parallel studies previously conducted on low carbon content wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 301
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1.] Staudingder, A., J. Appl. Phys., 49, 3870, (1978).Google Scholar
[2.] Kishino, S., Matsushita, Y. and Kanomori, M., Appl. Phys. Letts., 3, 213, (1979).Google Scholar
[3.] Pinizotto, R.F. and Schaake, H.F., in Defects in Semiconductors, Narayan, J. and Tan, T.Y. (Eds.), North-Holland, Amsterdam, (1981), p. 387.Google Scholar
[4.] Newman, R. C. and Willis, J. B., J. Phys. Chem. Solids, 2M, 373 (1965).Google Scholar
[5]. Baker, J. A., Tucker, T. N., Moyer, N. E., and Busher, R. C., J. Appl. Phys., 39, 4365 (1968).Google Scholar
[6]. Abe, T., Abe, Y., and Chikawa, J., in Semiconductor Silicon 1973, ed. by Huff, H. R. and Burgess, R. R., The Electrochemical Society, Princeton, NJ (1973), p. 95.Google Scholar
[7.] Graff, K., Hilgrath, J., and Neubrand, H., in Semiconductor Silicon 1977, ed. By Huff, H. R. and Sirtl, E., The Electrochemical Society, Princeton, NJ (1977), p. 575.Google Scholar
[8.] Bean, A. R. and Newman, R. C., J. Phys. Chem. Solids, 32, 1211, (1971).Google Scholar
[9.] Abe, T., Kikuchi, K., Shirai, S., and Muraoka, S., in Semiconductor Silicon 1981, ed. by Huff, H. R., Kriegler, R. J., and Takeishi, Y., The Electrochemical Society, Princeton, NJ (1981), p. 54.Google Scholar
[10.] Craven, R. A., in Semiconductor Silicon 1981, ed. by Huff, H. R., Kriegler, R. J., and Takeishi, Y., The Electrochemical Society, Princeton, NJ (1981), p. 254.Google Scholar
[11.] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J., and Hodul, D. T., Mater. Lett., 10, 87, (1990).Google Scholar
[12.] Kolbesen, B.O. and Muhlbauer, A., Solid State Electronics, 25, 759, (1982).Google Scholar
[13.] Nozaki, T., Yatsurugi, Y., and Akiyama, N., J. Electrochem. Soc., 117, 1566, (1970).Google Scholar
[14.] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J., and Hodul, D. T., in Defects in Materials, ed. by Bristowe, P. D., Epperson, J. E., Griffith, J. E., and Lilienthal-Weber, Z., Mat. Res. Soc. Symp. Proc., 209, 511, (1991).Google Scholar
[15.] Miltat, J. E. A. and Bowen, D. K., Phys. Stat. Sol., (a) 3, 431 (1970).Google Scholar
[16.] Miltat, J. and Dudley, M., J. Appl. Cryst., 13, 555–562 (1980).Google Scholar