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Published online by Cambridge University Press: 15 March 2011
Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4-(Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt 2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.