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Surface Structure of Sulfur Coated GaAs

Published online by Cambridge University Press:  25 February 2011

Yoshihisa Fujisaki  and
Shigeo Goto
Yoshihisa Fujisaki
Affiliation:
Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan
Shigeo Goto
Affiliation:
Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan
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Abstract

Surface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

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References

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