Hostname: page-component-54dcc4c588-xh45t Total loading time: 0 Render date: 2025-09-21T08:34:18.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth

Published online by Cambridge University Press:  21 February 2011

T. P. Humphreys ,
J. B. Posthill ,
D. P. Malta ,
R. E. Thomas ,
R. A. Rudder ,
G. C. Hudson  and
R. J. Markunas
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. E. Thomas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
G. C. Hudson
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
Get access

Absract

A novel substrate preparation procedure which can be employed to remove the original surface from as-received C(001) natural diamond substrates has been developed. A description of the various substrate processing steps which includes, low-energy ion implantation of C and O, high-temperature annealing, electrochemical etching and surface plasmas treatments is presented. Also demonstrated is the growth of topographically excellent homoepitaxial films by rf-plasma-enhanced chemical vapor deposition using water/ethanol mixtures on C(001) substrates.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. van Enckevort, W.J.P., Janssen, G., Vollenberg, W., Chermin, M., Giling, L.J., and Seal, M., Surf. and Coating Tech., 47, 39 (1991).Google Scholar
2. Posthill, J.B., Malta, D.P., Rudder, R.A., Hudson, G.C., Thomas, R.E., Markunas, R.J., Humphreys, T.P., Nemanich, R.J., Proc. 3rd Inter. Symp. on Diamond Materials, The Electrochemical Society, 93–17. 303 (1991).Google Scholar
3. Evans, T. and Phaal, C., Proc. Royal Society of London A, 270, 538 (1963).Google Scholar
4. Posthill, J.B., George, T., Malta, D.P., Humphreys, T.P., Rudder, R.A., Hudson, G.C., Thomas, R.E. and Markunas, R.J., Proc. 51st Ann. Meet. Electron Microsc. Soc. of America, 1196(1993).Google Scholar
5. Posthill, J.B., Rudder, R.A., Hudson, G.C., Malta, D.P., Fountain, G.G., Thomas, R.E., Markunas, R.J., Humphreys, T.P., Nemanich, R.J. and Black, D.R., Proc. 2nd Inter. Symp. on Diamond Materials, The Electrochemical Society, 91–8. 274 (1991).Google Scholar
6. Landstrass, M.I. and Ravi, K.V., Appl. Phys. Lett., 55, 975 (1989).Google Scholar
7. Malta, D.P., Posthill, J.B., Thomas, R.E., Fountain, G.G., Rudder, R.A., Hudson, G.C., Mantini, M.J., Markunas, R.J. and Humphreys, T.P., this proceedings.Google Scholar
8. Marchywka, M., Pehrsson, P.E., Binari, S.C. and Moses, D., J. Electrochemical Soc., 140, L19(1993).Google Scholar
9. Rudder, R.A., Hudson, G.C., Posthill, J.B., Thomas, R.E., Hendry, R.C., Malta, D.P., Markunas, R.J., Humphreys, T.P. and Nemanich, R.J., Appl. Phys. Lett., 60, 329 (1992).Google Scholar