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Surface Morphologies and Interfaces of TiSi2 Formed from UHV Deposited Ti on Si

Published online by Cambridge University Press:  28 February 2011

Hyeongtag Jeon ,
R. J. Nemanich ,
J.W. Honeycutt  and
G. A. Rozgonyi
Hyeongtag Jeon
Affiliation:
North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC 27695-8202
J.W. Honeycutt
Affiliation:
North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC 27695-8202
G. A. Rozgonyi
Affiliation:
North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC 27695-8202
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Abstract

The island formation of TiSi2 and the surface morphologies and interfaces of TiSi2 on Si have been examined and related to the surface and the interface energies. Ti (200Å and 400Å) films were deposited on clean, reconstructed Si(100) and Si(111) substrates at room temperature and also at high substrate temperatures (500°C~800°C). The TiSi2 formation process is monitored with in-situ LEED and AES and the surface morphologies and interfaces are examined with ex-situ SEM and TEM. For annealing to temperatures such that the C54 phase forms, the results indicate island formation with clean reconstructed substrate regions between the islands. The TiSi2 islands show different morphology on the (100) and (111) oriented substrates. The mechanism of TiSi2 island formation is described in terms of a liquid-liquid model, and the surface and interface energies for the TiSi2 island are determined from contact angle measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 307
Copyright
Copyright © Materials Research Society 1990

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