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Surface Imaging of III–V Semiconductors by Reflection Electron Microscopy and Inner Potential Measurements

Published online by Cambridge University Press:  15 February 2011

N. Yamamoto  and
J. C. H. Spence
N. Yamamoto
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ85287, (U.S.A.)
J. C. H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ85287, (U.S.A.)
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Abstract

Surfaces of two III–V semiconductor materials have been examined at 120 kV by reflection electron microscopy (REM) at high spatial resolution. Surface steps were found to give characteristic contrast due to several diffraction effects, one of which is interference between the Bragg (B) and Bragg–Laue (BL) reflected beam at a step edge. The electron diffraction pattern from a step showed split lines from B and BL reflections, which provides a method of accurately measuring the mean inner potential of these materials. Electron energy loss spectra showed large surface and bulk plasmon peaks which mainly limit the spatial resolution of REM. The penetration depth in REM is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 43
Copyright
Copyright © Materials Research Society 1982

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References

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