Hostname: page-component-5b777bbd6c-6lqsf Total loading time: 0 Render date: 2025-06-19T01:08:43.432Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Diffusion and Nucleation Processes in Thin Film Formation: The Case of Ag/Si(111)

Published online by Cambridge University Press:  25 February 2011

J. A. Venables ,
T. Doust  and
R. Kariotis
J. A. Venables
Affiliation:
also at Department of Physics, Arizona State University, Tempe, AZ 85287
T. Doust
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNI 9QH, Sussex, U.K.
R. Kariotis
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNI 9QH, Sussex, U.K.
Get access

Abstract

Surface diffusion and crystal growth processes have been studied in the Stranski-Krastanov growth system Ag/Si(111), using several UHV-SEM techniques. By depositing Ag at various rates 0.2 ≤ R ≤ 1.4 ML-min−1 through a mask of holes, surface diffusion of Ag over the intermediate layer has been observed, in competition with re-evaporation at high, and nucleation at low substrate temperatures, in the range 620 < T < 850K. The Si(111) √3Ag intermediate layer has been visualized using biassed secondary electron imaging. The surface diffusion and nucleation processes observed have been analyzed in terms of kinetic models. Comparison with experiment yields values for the adsorption, diffusion and binding (Ea′ Ed and Eb) energies of Ag on the intermediate layer. These values are approximately Ea = 2.45 ± 0.1 eV, Ed 0.35 ± 0.05 eV and Eb = 0.10 ± 0.03 eV, where the uncertainties result at least as much from lack of knowledge of pre-exponential factors in the models as in the accuracy of the experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 3
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Venables, J. A., Spiller, G. D. T. and Hanbucken, M., Rept. Progr. Phys. 47, 399 (1984).Google Scholar
[2] Naumovets, A. G. and Yu.Vedula, S., Surface Sci. Rep. 4, 365 (1985).Google Scholar
[3] Surface Mobilities on Solid Materials, edited by Binh, V. T. (Plenum, New York, 1982).Google Scholar
[4] Yu. Gavrilyuk, L. and Lifshits, V. G., Poverkhnost. Fizika. Khimiya. Mekhanika 4, 82 (1983).Google Scholar
[5] Suliga, E. and Henzler, M., J. Phys. C 16, 1543 (1983).CrossRefGoogle Scholar
[6] Futamoto, M., Hanbucken, M., Harland, C. J., Jones, G. W. and Venables, J.A., Surface Sci. 150, 430 (1985).Google Scholar
[7] Hanbucken, M., Doust, T., 0. Osasona, LeLay, G. and Venables, J.A., Surface Sci. 168, 133 (1986).CrossRefGoogle Scholar
[8] LeLay, G., Surface Sci. 132, 169 (1983).CrossRefGoogle Scholar
[9] LeLay, G., Manneville, M. and Kern, R., Surface Sci. 72, 405 (1978).Google Scholar
[10] Venables, J.A., Derrien, J. and Jansen, A.P., Surface-Sci. 95, 411 (1980).Google Scholar
[11] Hanbucken, M., Futamoto, M. and Venables, J.A., Surface Sci.147, 433 (1984)Google Scholar
[12] LeLay, G., Chauvet, A., Manneville, M. and Kern, R., Appl. Surface Sci. 9, 190 (1981); see also A. Chauvet, Thesis Marseille (1980).CrossRefGoogle Scholar
[13] van Loenen, E.J., Demuth, J.E., Tromp, R.M. and Hamers, R.J., Phys. Rev. Lett. 58, 373 (1987).CrossRefGoogle Scholar
[14] Wilson, R.J. and Chiang, S., Phys. Rev. Lett. 58, 369 (1987).CrossRefGoogle Scholar
[15] Kono, S., Higashiyama, K. and Sagawa, T., Surface Sci. 165, 21 (1986).Google Scholar
[16] Venables, J.A., J. Vac. Sci. Tech. B 4, 870 (1986); Phys. Rev. B, in press.Google Scholar
[17] Doust, T., Kariotis, R. and Vena–les, J.A., Surface Sci., in preparation.Google Scholar
[18] Jones, G.W. and Venables, J.A., Ultramicroscopy 18, 439 (1985); G.W. Jones, R. Kariotis and J.A. Venables, work in progress.Google Scholar
[19] Doust, T., Kariotis, R. and Venables, J.A., work in progress.Google Scholar
[20] Venables, J.A., Janssen, A.P., Akhter, P., Derrien, J. and Harland, C.J., J. Microscopy 118, 351 (1980).CrossRefGoogle Scholar
[21] Venables, J.A., Spiller, G.D.T., Fathers, D.J., Harland, C.J. and Hanbucken, M., Ultramicroscopy 11, 149 (1983).Google Scholar
[22] Harland, C.J. and Venables, J.A., Ultramicroscopy 17, 9 (1985).Google Scholar
[23] Harland, C.J., Jones, G.W., Doust, T. and Venables, J.A., Proc. 5th Pfefferkorn Conference, Burggen, October 1986, SEM Inc., in press.Google Scholar
[24] Hanbucken, M., Neddermeyer, H. and Venables, J.A., 137, L92 (1984).Google Scholar
[25] Telieps, W. and Bauer, E., Surface Sci. 162, 163 (1985).CrossRefGoogle Scholar
[26] Butz, R. and Wagner, H., Surface Sci. 87,69(1979).CrossRefGoogle Scholar
[27] Venables, J.A., Phil. Mag. 27, 693 (1973); see also B Lewis and J.C. Anderson, Nucleation and Growth of thin films (Academic, New York, 1978).Google Scholar
[28] Flynn, C.P., Phys. Rev. 134, A241 (1964).Google Scholar
[29] Gotoh, Y., Ino, S. and Komatsu, H., J. Crystal Growth 56, 498 (1982).Google Scholar
[30] Bermond, J.M. and Venables, J.A., J. Crystal Growth 64, 239 (1984).CrossRefGoogle Scholar