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Surface Cleaning and Passivation for the Growth of Si/Oxide/Si Structures

Published online by Cambridge University Press:  25 February 2011

Kun—Chih Wang ,
Huey—Liang Hwang ,
Chung—Yuan Kung  and
Tri—Rung Yew
Kun—Chih Wang
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Huey—Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Chung—Yuan Kung
Affiliation:
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Tri—Rung Yew
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
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Abstract

This paper presents the results of surface cleaning and passivation of Si and oxide surfaces for the growth of Si/oxide/Si structures. Silicon surfaces are cleaned by the spin—etch process prior to the growth of silicon oxide. A silicon layer is then deposited after subsequent surface cleaning and chemical treatment on the surface of oxide/Si. Both the oxide and the silicon layers are grown in a plasma enhanced chemical vapor deposition system. The interface structure between layers of deposited Si/oxide/Si are observed by cross—section transmission electron microscopy (XTEM).

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References

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