Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-02-10T12:25:14.661Z Has data issue: false hasContentIssue false
  • English
  • Français

The Surface Chemistry of CdTe Mocvd

Published online by Cambridge University Press:  22 February 2011

Wen-Shryang Liu  and
Gregory B. Aupp
Wen-Shryang Liu
Affiliation:
Science and Engineering of Materials Program
Gregory B. Aupp
Affiliation:
Department of Chemical, Bio and Materials Engineering Center for Solid State Electronics ResearchArizona State University, Tempe, Arizona 85287-6006
Get access

Abstract

Temperature programmed desorption (TPD) studies in ultra high vacuum revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe. Dimethylcadmium partially decomposes to produce Cd adatoms; a large fraction of the excess Cd atoms desorb upon heating. In contrast, DETe desorbs without decomposing, suggesting that the rate limiting step in CdTe MOCVD on CdTe(111)A is surface decomposition of the tellurium alkyl.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 239
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Keuch, T. F., Mater. Sci. Rpts. 2(1), 1 (1987).CrossRefGoogle Scholar
[2] Hess, D. W., Jensen, K. F. and Anderson, T. J., Rev. Chem. Eng. 3, 97 (1985).Google Scholar
[3] Mullin, J. B., Irvine, S. J. C. and Ashen, D. J., J. Cryst. Growth 55, 92 (1981).Google Scholar
[4] Kuznetsov, P. I., Zhuravlev, L. A., Odin, I. N., Shemet, V. V. and Novoselova, A. V., Inorg. Mater. USSR 18, 779 (1982).Google Scholar
[5] Hicks, R. F., Proc. IEEE 80(10), 1625 (1992).Google Scholar
[6] Raupp, G. B. and Hindman, G. T., in: Tungsten and Other Refractory Metals for VLSI VI, Blewer, R. S. and McConica, C. M. (MRS, Pittsburgh, PA, 1989) p. 231.Google Scholar
[7] Hindman, G. T., Ph. D. Dissertation, Arizona State University, 1989.Google Scholar
[8] Inoue, M., Teramoto, I. and Takayanagi, S., J. Appl. Phys. 33, 2578 (1962).Google Scholar
[9] Stinespring, C. D. and Freedman, A., Chem. Phys. Lett. 143(6), 584 (1988).Google Scholar
[10] Liu, B., McDaniel, A. H. and Hicks, R. F., J. Cryst. Growth 112, 192 (1991).Google Scholar
[11] Hicks, R. F., National Meeting of the AICHE, St. Louis, MO, November 1993.Google Scholar
[12] Snyder, D. W., Sides, P. J. and Ko, E. I., J. Electrochem. Soc. 139(7), L66 (1992).Google Scholar