Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-09T21:55:10.198Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Charging of Phosphors and its Effects on Cathodoluminescence at Low Electron Energies

Published online by Cambridge University Press:  10 February 2011

C. H. Seager ,
W. L. Warren  and
D. R. Tallant
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, chseage@sandia.gov
W. L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, chseage@sandia.gov
D. R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, chseage@sandia.gov
Get access

Abstract

Measurements of the threshold for secondary electron emission and shifts of the carbon Auger line position have been used to deduce the surface potential of several common phosphors during irradiation by electrons in the 0.5 – 5.0 keV range. All of the insulating phosphors display similar behavior: the surface potential is within ±1 V of zero at low electron energies. However, above 2–3 kV it becomes increasingly negative, reaching hundreds of volts within 1 keV of the turn-on energy. The electron energy at which this charging begins decreases dramatically after Coulomb aging at 17 μA/cm2 for 30–60 min‥ Measurements using coincident electron beams at low and high electron energies to control the surface potential were made to investigate the dependence of the cathodoluminescence (CL) process on charging. Initially, the CL from the two beams is identical to the sum of the separate beam responses, but after Coulomb aging large deviations from this additivity are observed. These results indicate that charging has important, detrimental effects on CL efficiency after prolonged e-beam irradiation. Measurements of the electron energy dependence of the CL efficiency before and after Coulomb aging will also be presented, and the implications of these data on the physics of the low-voltage CL process will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 277
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jaskie, J. E., MRS Bulletin. 21, 59 (1996).Google Scholar
2. Ozawa, L., in Cathodoluminescence (Kodansha, Tokyo, 1990).Google Scholar
3. Seager, C. H., Warren, W. L., and Tallant, D., to be published in the Journal of Applied Physics.Google Scholar
4. Seager, C. H., Tallant, D., and Warren, W. L., submitted to the Journal of Applied Physics.Google Scholar
5. Bart, F., Guittet, M. J., Henriot, M., Thromat, N., Gautier, M., and Duraud, J. P., J. Electron Spectros. 69, 245 (1994).Google Scholar
6. Gilmore, I. S. and Seah, M. P., Surf, and Interi Analy. 23, 191 (1995).Google Scholar
7. Hren, J. J. in Principles of Scanning Microscopy ed. by Joy, D. c., Romig, A. L., and Goldstein, J. I. (Plenum, New York, 1986), p. 353.Google Scholar
8. Holloway, P., private communication.Google Scholar
9. Bart, F., Guittet, M. J., Henriot, M., Thromat, N., Gautier, M., and Duraud, J. P., J. Electron Spectros. 69, 245 (1994).Google Scholar
10. Gilmore, I.S. and Seah, M. P., Surf, and Interf. Analy. 23, 191 (1995).Google Scholar
11. Slodzian, G., Optik 77, 148 (1987).Google Scholar
12. Decroupet, D., Liehr, M., Thiry, P. A., Pireaux, J. J., and Caudano, R., J. Vac. Sci. Technol. A4, 1304 (1986).Google Scholar
13. Cazaux, J., J. Appl. Phys. 59, 1418 (1986).Google Scholar
14. Cazaux, J., Inst. Phys. Conf. Series No. 93, 2, 375 (1988).Google Scholar
15. Cazaux, J. and Le Gressus, C., Scanning Microsc. 5, 17 (1991).Google Scholar
16. Cazaux, J. and Leheude, P., J. Electron Spectroscopy and Rel. Phenom. 59, 49 (1992).Google Scholar
17. Joy, D. C. and Joy, C. S., MICRON 27, 247 (1996).Google Scholar
18. Amelio, G. F., J. Vac. Sci. Technol. 7, 593 (1970).Google Scholar
19. Leamy, H. J., in Physical Electron Microscopy, ed. by Wells, O. C., Heinrich, K. F. J., and Newbury, D. E. (VanNostrand Reinhold, New York, 1981).Google Scholar
20. Hoff, P. H. and Everhart, T. E., IEEE Trans Elect. Devices ED17, 452 (1970).Google Scholar