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Suppression of NiSi-to-NiSi2 Transition Using Very Short-time RTA Silicidation

Published online by Cambridge University Press:  01 February 2011

D. Ma ,
D. Z. Chi ,
W. D. Wang ,
A. S. W. Wong  and
S. J. Chua
D. Ma
Affiliation:
Institute of Materials Research and Engineering, Research Link 3, Singapore 117602 E-mail: d-ma@imre.org.sg
D. Z. Chi
Affiliation:
Institute of Materials Research and Engineering, Research Link 3, Singapore 117602 E-mail: d-ma@imre.org.sg
W. D. Wang
Affiliation:
Institute of Materials Research and Engineering, Research Link 3, Singapore 117602 E-mail: d-ma@imre.org.sg
A. S. W. Wong
Affiliation:
Institute of Materials Research and Engineering, Research Link 3, Singapore 117602 E-mail: d-ma@imre.org.sg
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, Research Link 3, Singapore 117602 E-mail: d-ma@imre.org.sg
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Abstract

Thermal stability of NiSi is a major concern for its application in sub-0.1 μm CMOS devices, due to the transition of NiSi to the high-resistivity disilicide (NiSi2) at elevated temperatures. In this study, we have investigated the effect of RTA silicidation duration on NiSito-NiSi2 transition during Ni-silicidation reaction of Ni film (20-25 nm thick) on (100)Si. It was found that the NiSi-NiSi2 transition temperature was increased remarkably from 700 to > 800 °C by reducing the RTA time from 60 to 1 s. Agglomeration of silicides films was also found to besuppressed by short-time annealing. A temperature-time transformation (TTT) diagram has been constructed, which demonstrates the time-dependency of NiSi-NiSi2 transition. Based on the classical theory on phase transformation kinetics, a concept of induction time was employed to elucidate the key roles of transformation time and film thickness in determining the NiSi-NiSi2 transition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B1.9
Copyright
Copyright © Materials Research Society 2002

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