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Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

Published online by Cambridge University Press:  21 March 2011

Z. Liliental-Weber ,
J. Jasinski ,
D. Cherns ,
M. Baines  and
R. Davis
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720 m/s 62/203
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720 m/s 62/203
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, UNITED KINGDOM
M. Baines
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, UNITED KINGDOM
R. Davis
Affiliation:
Department of Materials Science and Engineering, University of North Carolina, Raleigh, NC.
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Abstract

Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I5.7.1
Copyright
Copyright © Materials Research Society 2002

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References

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