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Study on the Elementary Steps of the Epitaxial Growth of Bi-Sr-Ca-Cu-O on the Surface of Si and Mgo by Means of Rheed and Photoelectron Spectroscopies.

Published online by Cambridge University Press:  28 February 2011

Takashi Hanada ,
Maki Kawai ,
Tsutomu Goda  and
Shousuke Teratani
Takashi Hanada
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori‐ku, Yokohama, 227 and The Institute of Physical and Chemical Research, Wako‐shi, 351‐01.
Maki Kawai
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori‐ku, Yokohama, 227 and The Institute of Physical and Chemical Research, Wako‐shi, 351‐01.
Tsutomu Goda
Affiliation:
Tokyo Gakugei University, Koganei‐shi, Tokyo, 184 Japan.
Shousuke Teratani
Affiliation:
Tokyo Gakugei University, Koganei‐shi, Tokyo, 184 Japan.
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Abstract

Elementary steps of the oxide formation on a Si(001) substrate surface have been studied by means of RHEED, LEED, XPS and UPS. A Bi monolayer on Si (001 ) terminates with a surface dangling bond. Oxide formation on to this surface was studied one by one. Oxidation of Bi overlayered system with oxygen and N2O revealed that the surface Si was inactive to NoO exposure unless Sr was evaporated on. Bi overlayer was easily oxidized with O2 but not with N2O. Further oxidation of surface with Sr and Cu coevaporated system has also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 715
Copyright
Copyright © Materials Research Society 1990

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References

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