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Study of ZnTe:Cu/Metal Interfaces in CdS/CdTe Phovoltaic Solar Cells

Published online by Cambridge University Press:  01 February 2011

T. A. Gessert ,
C. L. Perkins ,
S. E. Asher ,
A. Duda  and
M. R. Young
T. A. Gessert
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO, USA 80401
C. L. Perkins
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO, USA 80401
S. E. Asher
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO, USA 80401
A. Duda
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO, USA 80401
M. R. Young
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO, USA 80401
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Abstract

The present model for current transport at the CdTe/p-ZnTe:Cu/metal back contact assumes that the CdTe and ZnTe valence bands align, while current transport at a highly doped ZnTe and a metal interface proceeds by tunneling. To test part of this model, we have investigated the electrical and material properties of CdS/CdTe devices where the outer metal is either Ti or Ni. Our results show that differences in device series resistance are not linked simply to metal/ZnTe:Cu interfacial contact resistance, but that metallization-induced diffusion remains a more likely cause of significant performance distinctions.

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References

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